? ? ? ? guilin guilin guilin guilin strong strong strong strong micro-electronics micro-electronics micro-electronics micro-electronics co.,ltd. co.,ltd. co.,ltd. co.,ltd. gm bt 2 907 ( ? mmbt2907 ) gm bt 2 907 a ( ? mmbt2907a ) features features features features c pnp switching transistor max max max max imum imum imum imum ratings ratings ratings ratings ~? characteristic ? symbol ? gm bt 2 907 gm bt 2 907 a unit collector-emitter voltage ?O - lO? v ceo -4 0 -6 0 vdc collector-base voltage ?O - O? v cbo - 60 -60 vdc emitter-base voltage lO - O? v ebo - 5.0 -5 .0 vdc collector current - continuous ?O - Bm ic - 600 - 600 madc thermal thermal thermal thermal characteristics characteristics characteristics characteristics characteristic ? symbol ? max ? unit total device dissipation ? fr-5 board(1) t a = 25 ?? 25 derate above25 ^ 25 fp p d 225 1.8 mw mw/ total device dissipation ? alumina substrate Xr ,(2)t a = 25 derate above25 ^ 25 fp p d 300 2.4 mw mw/ thermal resistance junction to ambient r ja 417 /w junct io n and storage temperatur e Y??? t j , t stg -55to+150 device device device device marking marking marking marking gm gm gm gm bt bt bt bt 2 2 2 2 907 907 907 907 ( ? mmbt2907 ) = = = = m2 m2 m2 m2 b;gm b;gm b;gm b;gm bt bt bt bt 2 2 2 2 907 907 907 907 a a a a ( ? mmbt2907a ) = = = = 2f 2f 2f 2f
? ? ? ? guilin guilin guilin guilin strong strong strong strong micro-electronics micro-electronics micro-electronics micro-electronics co.,ltd. co.,ltd. co.,ltd. co.,ltd. gm bt 2 907 ( ? mmbt2907 ) gm bt 2 907 a ( ? mmbt2907a ) electrical electrical electrical electrical characteristics characteristics characteristics characteristics (t (t (t (t a a a a =25 =25 =25 =25 unless unless unless unless otherwise otherwise otherwise otherwise noted noted noted noted of?? 25 ) ) ) ) characteristic ? symbol ? min ? max ? unit collector-emitter breakdown vo l tage(3) ?O - lO? (ic= - 10madc,i b =0) v (br)ceo gm bt 2 907 gm bt 2 907 a - 30 -6 0 vdc collector-base breakdown voltage ?O - O? (ic= - 10 adc,i e =0) v (br)cbo - 60 __ vdc emitter-base breakdown voltage lO - O? (i e = - 10 adc,ic=0) v (br)ebo - 5.0 vdc collector cutoff current ?O? (v ce = -3 0vdc, v eb (off) = -0 . 5 vdc) i cex -5 0 nadc collector cutoff current ?O? (v cb = - 50vdc,i e =0) (v cb = - 50vdc,i e =0,t a =125 ) i cbo gm bt 2 907 gm bt 2 907 a gm bt 2907 gm bt 2 907 a - 0.0 2 - 0.01 -2 0.0 - 10.0 adc base cutoff current O? (v ce = -3 0vdc, v eb (off) = -0.5 vdc) i b -5 0 nadc dc current gain ? h fe (i c = - 0.1madc,v ce = - 10.0vdc) gm bt 2907 gm bt 2 907 a 35 75 (i c = - 1.0madc,v ce = - 10.0vdc) gm bt 2907 gm bt 2 907 a 50 100 (i c = - 10madc,v ce = - 10.0vdc) gm bt 2907 gm bt 2 907 a 75 100 (i c = - 150madc,v ce = - 10.0vdc)(3) 100 300 (i c = - 500madc,v ce = - 10.0vdc)(3) gm bt 2907 gm bt 2 907 a 30 5 0 collector-emitter saturation voltage ?OlO?? (i c = - 150madc, i b = - 15madc) (i c = - 500madc, i b = - 50madc) v ce(sat) - 0.4 - 1.6 vdc base-emitter saturation voltage OlO?? (i c = - 150madc, i b = - 15madc) (i c = - 500madc, i b = - 50madc) v be(sat) - 1.3 - 2.6 vdc
? ? ? ? guilin guilin guilin guilin strong strong strong strong micro-electronics micro-electronics micro-electronics micro-electronics co.,ltd. co.,ltd. co.,ltd. co.,ltd. gm bt 2 907 ( ? mmbt2907 ) gm bt 2 907 a ( ? mmbt2907a ) small-signal small-signal small-signal small-signal characteristics characteristics characteristics characteristics ? characteristic ? symbol ? min ? max ? unit current-gain-bandwidth product ?e (i c =-50madc,v ce =-20vdc,f=100mhz) f t 200 mhz output capacitance ? (v cb =-10.0vdc, i e =0, f=1.0mhz) c obo 80 pf input capacitance ? (v eb =-2.0vdc, i c =0, f=1.0mhz) c ibo 30 pf switching switching switching switching characteristics characteristics characteristics characteristics _P tu rn -on time ?rg (vcc=-30vdc ic=-150madc,i b1 =-15madc) t on 45 ns delay time trg t d 10 rise time rg t r 40 tu rn -off time ?rg (vcc=-6.0vdc,ic=-150madc, i b1 =i b2 =-15madc) t off 100 ns storage time rg t s 80 fall time ?rg t f 30 1. fr-5=1.0 0.75 0.062in. 2. alumina=0.4 0.3 0.024in.99.5%alumina. 3. pulse width < 300 u s;duty cycle < 2.0%. 4. f t is defined as the frequency at which (h fe ) extrapolates to unity.
? ? ? ? guilin guilin guilin guilin strong strong strong strong micro-electronics micro-electronics micro-electronics micro-electronics co.,ltd. co.,ltd. co.,ltd. co.,ltd. gm bt 2 907 ( ? mmbt2907 ) gm bt 2 907 a ( ? mmbt2907a ) dimension dimension dimension dimension b? (unit) mm
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